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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3627 DESCRIPTION With TO-220Fa package High collector breakdown voltage APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER CHA IN Collector current Base current Collector-base voltage Collector-emitter voltage E SEM NG Open emitter OND IC CONDITIONS TOR UC VALUE 250 200 7 10 15 2 UNIT V V V A A A Open base Open collector Emitter-base voltage Collector current-peak Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 2.0 W 30 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA; IB=0 IC=1mA; IE=0 IC=5 A;IB=0.5 A IC=5 A;IB=0.5 A VCB=200V ;IE=0 VEB=7V ;IC=0 IC=10mA ; VCE=5V IC=5A ; VCE=5V 15 MIN 200 250 2SC3627 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 TYP. MAX UNIT V V 1.0 1.5 100 1 |I V V A mA Switching times tr ts tf Rise time Fall time CHA IN Storage time E SEM NG VCCO 150V,RL=25| IB1=-IB2=0.6 A OND IC TOR UC 1.0 |I |I 2.5 1.0 20 80 s s |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3627 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 |
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